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NJG1151MD7 - 1 - ver.2012-06-29 2-way active splitter gaas mmic general description package outline the NJG1151MD7 is 2-way active splitter with normal ly loop through switch gaas mmic for stb/recorder/tv applic ations. in order to simplify the tuner structure, the njg11 51md7 does not only offer a 2-way active splitter, but also su pply loop through switch for optimize the complicate circuit. the NJG1151MD7 achieve better characteristics and h igh esd tolerance with less external components. a small and ultra-thin package of eqfn14-d7 is adopt ed. features operating frequency 40 to 1000mhz package eqfn14-d7 (package size: 1.6x1.6x0.397mm t yp.) [ active mode: operating voltage 5.0v ] operating current 100ma typ. gain 6.0db typ. (zs=zl=50 ohm, zs=zl=75 ohm) noise figure 2.5db typ. (zs=zl=50 ohm) cso 60dbc typ. (zs=zl=75 ohm, 132ch, +15dbmv) ctb 65dbc typ. (zs=zl=75 ohm, 132ch, +15dbmv) output to output isolation 20db typ. (zs=zl=50 ohm , zs=zl=75 ohm) [ through mode: operating voltage 0v ] insertion loss 0.4db typ. (zs=zl=50 ohm) pin configuration note: specifications and description listed in this datasheet are subject to change without notice. pin connection 1. gnd 8. gnd 2. swout1 9. splout1 3. swin1 10. spin1 4. gnd 11. gnd 5. swout2 12. lnaout 6. swin2 13. gnd 7. splout2 14. lnain exposed pad: gnd (top view) 1pin index 5 6 7 9 10 11 12 13 14 2 1 3 4 8 lnain lnaout splin splout1 swout2 swout1 swin1 splout2 swin2 gnd gnd gnd gnd gnd splitter splitter splitter NJG1151MD7
NJG1151MD7 - 2 - absolute maximum ratings t a =+25c, z s =z l =50 ohm / 75 ohm parameter symbol conditions ratings units drain voltage v dd 6.0 v input power p in v dd =5.0v +10 dbm power dissipation p d 4-layer fr4 pcb with through-hole (76.2x114.3mm), t j =150c 1300 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+150 c electrical characteristics (dc characteristics) v dd =5.0v, t a =+25c, with application circuit1 parameters symbol conditions min typ max units operating voltage v dd 2.4 5.0 5.5 v operating current i dd rf off - 100 140 ma
NJG1151MD7 - 3 - electrical characteristics2 (rf characteristics: active mode, 50 ohm) v dd =5.0v, freq=40 to 1000mhz, t a =+25c, z s =z l =50ohm, with application circuit1 parameters symbol conditions min typ max units small signal gain1_1 gain1_1 exclude pcb & connector losses (note1) freq=40 to 900mhz 4.0 6.0 8.0 db small signal gain1_2 gain1_2 exclude pcb & connector losses (note1) freq=40 to 1000mhz 4.0 6.0 9.0 db gain flatness1_1 gflat1_1 exclude pcb & connector losses (note1) freq=40 to 900mhz - 1.0 2.0 db gain flatness1_2 gflat1_2 exclude pcb & connector losses (note1) freq=40 to 1000mhz - 1.0 3.0 db noise figure1 nf1 exclude pcb & connector losses (note2) - 2.5 3.7 db input power 1db compression1 p -1db(in) 1 +1.0 +7.0 - dbm input 3rd order intercept point1 iip3_1 f1=freq, f2=freq+100khz, p in =-12dbm +10.0 +20.0 - dbm 2nd order intermodulation distortion1 im2_1 f1=40.75mhz, f2=813.25mhz, fmeas=854mhz, p in 1=p in 2=-8dbm 37.0 52.0 - db 3rd order intermodulation distortion1 im3_1 f1=893.25mhz, f2=873.25mhz, fmeas=853.25mhz, p in 1=p in 2=-8dbm 49.0 60.0 - db reverse isolation1 isl1 rf out1 to rf in rf out2 to rf in 20.0 28.0 - db output to output isolation1 oisl1 rf out1 to rf out2 18.0 20.0 - db rf in return loss1 rli1 rf in port 8.0 15.0 - db rf out return loss1 rlo1 rf out1, rf out2 port 13.0 20.0 - db (note1) input and output pcb, connector losses (rfi n-rfout1): 0.02db(40mhz), 0.16db(1000mhz) input and output pcb, connector losses (rfin-rfout 2): 0.02db(40mhz), 0.15db(1000mhz) (note2) input pcb and connector losses: 0.01db(40mh z), 0.06db(1000mhz)
NJG1151MD7 - 4 - electrical characteristics3 (rf characteristics: through mode, 50 ohm) v dd =0v, freq=40 to 1000mhz, t a =+25c, z s =z l =50ohm, with application circuit1 parameters symbol conditions min typ max units insertion loss2 loss2 exclude pcb & connector losses (note1) - 0.4 2.0 db input power 1db compression2 p -1db(in) 2 +1.0 +10.0 - dbm 2nd order intermodulation distortion2 im2_2 f1=90mhz, f2=100mhz, fmeas=190mhz, p in 1=p in 2=-5dbm 50.0 65.0 - db 3rd order intermodulation distortion2 im3_2 f1=200mhz, f2=210mhz, fmeas=220mhz, p in 1=p in 2=-5dbm 53.0 70.0 - db rf in return loss2 rli2 rf in port 8.0 15.0 - db rf out return loss2 rlo2 rf out2 port 8.0 15.0 - db (note1) input and output pcb, connector losses (rfi n-rfout2): 0.02db(40mhz), 0.15db(1000mhz)
NJG1151MD7 - 5 - electrical characteristics4 (rf characteristics: active mode, 75 ohm) v dd =5.0v, freq=40 to 1000mhz, t a =+25c, z s =z l =75 ohm, with application circuit1 parameters symbol conditions min typ max units small signal gain3 (75 ohm) gain3 exclude pcb & connector losses - 6.0 - db composite second order3 cso3 132channels, cw, p in =+15dbmv - 60.0 - dbc composite triple beat 3 ctb3 132channels, cw, p in =+15dbmv - 65.0 - dbc reverse isolation3 isl3 rf out1 to rf in rf out2 to rf in 28.0 db output to output isolation3 oisl3 rf out1 to rf out2 20.0 db rf in return loss3 (75 ohm) rli3 rf in port - 15.0 - db rf out return loss3 (75 ohm) rlo3 rf out1, rf out2 port - 25.0 - db electrical characteristics5 (rf characteristics: through mode, 75 ohm) v dd =0v, freq=40 to 1000mhz, t a =+25c, z s =z l =75 ohm, with application circuit1 parameters symbol conditions min typ max units insertion loss4 (75 ohm) loss4 exclude pcb & connector losses - 1.0 - db composite second order4 cso4 132channels, cw, p in =+15dbmv - 55.0 - dbc composite triple beat4 ctb4 132channels, cw, p in =+15dbmv - 60.0 - dbc rf in return loss4 (75 ohm) rli4 rf in port - 15.0 - db rf out return loss4 (75 ohm) rlo4 rf out1, rf out2 port - 15.0 - db
NJG1151MD7 - 6 - terminal description pin no. symbol description 1 gnd ground terminal. this t erminal should be connected to the ground plane as close as possible for excellent rf performance. 2 swout1 rf signal output terminal of the switch. rf signal is output through the external circuit. please connect the dc blocking capacitor of the app lication circuit. 3 swin1 rf signal input terminal of the switch. rf signal is input through the external circuit. please connect the dc blocking capacitor of the app lication circuit. 4 gnd ground terminal. this terminal should be connected to the ground pla n e as close as possible for excellent rf performance. 5 swout2 rf signal output terminal of the switch. rf signal is output through the external circuit. please connect the dc blocking capacitor of the app lication circuit. 6 swin2 rf signal input terminal of the switch. rf signal is input through the external circuit. please connect the dc blocking capacitor of the app lication circuit. 7 splout2 rf signal output terminal of the splitter. 8 gnd ground terminal. this terminal should be connected to the gro und plane as close as possible for excellent rf performance. 9 splout1 rf signal output terminal of the splitter. 10 splin rf signal input terminal of the splitter. 11 gnd ground terminal. this terminal should be connected to the ground pla ne as close a s possible for excellent rf performance. 12 lnaout rf signal output terminal of the lna. rf signal is output through the external circuit. this terminal is also a voltage supply terminal of the switch and lna, please supply the voltage through an inductor of th e application circuit. 13 gnd ground terminal. this terminal should be connected to the ground pla ne as close as possible for excellent rf performance. 14 lnain rf signal input terminal of the lna. rf signal is input through the external circuit. this terminal is also a current adjustment terminal of the lna, please connect to ground via a resistor of the appl ication circuit. exposed pad gnd ground terminal.
NJG1151MD7 - 7 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =50 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 1 2 3 4 5 6 7 8 0 500 1000 1500 gain (db) nf (db) frequency (mhz) nf gain gain, nf vs. frequency (freq=20~1500mhz, rf in to rf out1) (exclude pcb, connector losses) -4 -2 0 2 4 6 8 10 1 2 3 4 5 6 7 8 0 500 1000 1500 gain (db) nf (db) frequency (mhz) nf gain gain, nf vs. frequency (freq=20~1500mhz, rf in to rf out2) (exclude pcb, connector losses) -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout (dbm) pin (dbm) p-1db(in)=+8.4dbm pout pout vs. pin (freq=620mhz, rf in to rf out1) -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout (dbm) pin (dbm) p-1db(in)=+8.6dbm pout pout vs. pin (freq=620mhz, rf in to rf out2) -2 0 2 4 6 8 60 80 100 120 140 160 -40 -30 -20 -10 0 10 gain (db) i dd (ma) pin (dbm) gain i dd gain, i dd vs. pin (freq=620mhz, rf in to rf out1) p-1db(in)=+8.4dbm -2 0 2 4 6 8 60 80 100 120 140 160 -40 -30 -20 -10 0 10 gain (db) i dd (ma) pin (dbm) gain i dd gain, i dd vs. pin (freq=620mhz, rf in to rf out2) p-1db(in)=+8.6dbm
NJG1151MD7 - 8 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =50 ohm, with application circuit1 -5 0 5 10 15 0 200 400 600 800 1000 p-1db(in) vs. frequency (freq=40~1000mhz, rf in to rf out1) p-1db(in) (dbm) frequency (mhz) -5 0 5 10 15 0 200 400 600 800 1000 p-1db(in) vs. frequency (freq=40~1000mhz, rf in to rf out2) p-1db(in) (dbm) frequency (mhz) -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 30 pout, im3 (dbm) pin (dbm) pout im3 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz, rf in to rf out1) iip3=+20.4dbm oip3=+26.1dbm -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 30 pout, im3 (dbm) pin (dbm) pout im3 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz, rf in to rf out2) iip3=+20.7dbm oip3=+26.0dbm 5 10 15 20 25 30 0 200 400 600 800 1000 iip3, oip3 vs. frequency (f1=40~1000mhz, f2=f1+100khz, pin=-12dbm, rf in to rf out1) iip3, oip3 (dbm) frequency (mhz) oip3 iip3 5 10 15 20 25 30 0 200 400 600 800 1000 iip3, oip3 vs. frequency (f1=40~1000mhz, f2=f1+100khz, pin=-12dbm, rf in to rf out2) iip3, oip3 (dbm) frequency (mhz) oip3 iip3
NJG1151MD7 - 9 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =50 ohm, with application circuit1 05 10 15 20 25 30 35 40 0 500 1000 1500 rf in return loss vs. frequency (freq=20~1500mhz) rli (db) frequency (mhz) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf out return loss vs. frequency (freq=20~1500mhz) rlo (db) frequency (mhz) rf out2 rf out1 05 10 15 20 25 30 35 40 0 500 1000 1500 reverse isolation vs. frequency (freq=20~1500mhz) isl (db) frequency (mhz) rf out2 to rf in rf out1 to rf in 05 10 15 20 25 30 35 40 0 500 1000 1500 output to output isolation vs. frequency (freq=20~1500mhz) oisl (db) frequency (mhz) rf out1 to rf out2 rf out2 to rf out1 05 10 15 20 25 30 35 40 0 500 1000 1500 reverse isolation vs. frequency (freq=20~1500mhz) isl (db) frequency (mhz) rf out2 to rf in rf out1 to rf in 05 10 15 20 25 30 35 40 0 500 1000 1500 output to output isolation vs. frequency (freq=20~1500mhz) oisl (db) frequency (mhz) rf out1 to rf out2 rf out2 to rf out1
NJG1151MD7 - 10 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =50 ohm, with application circuit1 s11, s22 (rf out1) s11, s22 (rf out2) s21, s12 (rf out1) s21, s12 (rf out2) zin, zout (rf out1) zin, zout (rf out2)
NJG1151MD7 - 11 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =50 ohm, with application circuit1 vswri, vswro (rf out1) vswri, vswro (rf out2) s11, s22 (50mhz~20ghz, rf out1) s11, s22 (50mhz~20ghz, rf out2) s21, s12 (50mhz~20ghz, rf out1) s21, s12 (50mhz~20ghz, rf out2)
NJG1151MD7 - 12 - electrical characteristics (active mode, 50 ohm) conditions: ta=25c, z s =z l =50 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gain vs. v dd (freq=620mhz) gain (db) v dd (v) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 1 2 3 4 5 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 nf vs. v dd (freq=620mhz) nf (db) v dd (v) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 -4 -2 0 2 4 6 8 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 p-1db(in) vs. v dd (freq=620mhz) p-1db(in) (dbm) v dd (v) rf in to rf out1 rf in to rf out2 5 10 15 20 25 30 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 iip3 vs. v dd (f1=620mhz, f2=620.1mhz, pin=-12dbm) iip3 (dbm) v dd (v) rf in to rf out1 rf in to rf out2 20 25 30 35 40 45 50 55 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 im2 vs. v dd (f1=40.75mhz, f2=813.25mhz, fmeas=854mhz, pin=-8dbm ) im2 (db) v dd (v) rf in to rf out1 rf in to rf out2 20 30 40 50 60 70 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 im3 vs. v dd (f1=893.25mhz, f2=873.25mhz, fmeas=853.25mhz, pin=- 8dbm) im3 (db) v dd (v) rf in to rf out1 rf in to rf out2
NJG1151MD7 - 13 - electrical characteristics (active mode, 50 ohm) conditions: ta=25c, z s =z l =50 ohm, with application circuit1 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 rf in return loss vs. v dd (freq=620mhz) rli (db) v dd (v) 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 rf out return loss vs. v dd (freq=620mhz) rlo (db) v dd (v) rf out1 rf out2 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 reverse isolation vs. v dd (freq=620mhz) isl (db) v dd (v) rf out1 to rf in rf out2 to rf in 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 output to output isolation vs. v dd (freq=620mhz) oisl (db) v dd (v) rf out1 to rf out2 rf out2 to rf out1 0 50 100 150 200 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i dd vs. v dd (rf off) i dd (ma) v dd (v)
NJG1151MD7 - 14 - electrical characteristics (active mode, 50 ohm) conditions: ta=25c, z s =z l =50 ohm, with application circuit1 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz, rf in to rf out1) v dd =2.5v v dd =5.0v v dd =6.0v k factor frequency (ghz) 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz, rf in to rf out2) v dd =2.5v v dd =5.0v v dd =6.0v k factor frequency (ghz)
NJG1151MD7 - 15 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, z s =z l =50 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 gain vs. temperature (freq=620mhz) gain (db) temperature ( o c) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 1 2 3 4 5 6 -40 -20 0 20 40 60 80 100 nf vs. temperature (freq=620mhz) nf (db) temperature ( o c) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 p-1db(in) vs. temperature (freq=620mhz) p-1db(in) (dbm) temperature ( o c) rf in to rf out1 rf in to rf out2 5 10 15 20 25 30 -40 -20 0 20 40 60 80 100 iip3 vs. temperature (f1=620mhz, f2=620.1mhz, pin=-12dbm) iip3 (dbm) temperature ( o c) rf in to rf out1 rf in to rf out2 20 25 30 35 40 45 50 55 60 -40 -20 0 20 40 60 80 100 im2 vs. temperature (f1=40.75mhz, f2=813.25mhz, fmeas=854mhz, pin=-8dbm ) im2 (db) temperature ( o c) rf in to rf out1 rf in to rf out2 30 35 40 45 50 55 60 65 70 -40 -20 0 20 40 60 80 100 im3 vs. temperature (f1=893.25mhz, f2=873.25mhz, fmeas=853.25mhz, pin=- 8dbm) im3 (db) temperature ( o c) rf in to rf out1 rf in to rf out2
NJG1151MD7 - 16 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, z s =z l =50 ohm, with application circuit1 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf in return loss vs. temperature (freq=620mhz) rli (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf out return loss vs. temperature (freq=620mhz) rlo (db) temperature ( o c) rf out1 rf out2 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 reverse isolation vs. temperature (freq=620mhz) isl (db) temperature ( o c) rf out1 to rf in rf out2 to rf in 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 output to output isolation vs. temperature (freq=620mhz) oisl (db) temperature ( o c) rf out1 to rf out2 rf out2 to rf out1 0 50 100 150 200 -40 -20 0 20 40 60 80 100 i dd vs. temperature (rf off) i dd (ma) temperature ( o c)
NJG1151MD7 - 17 - electrical characteristics (active mode, 50 ohm) conditions: v dd =5.0v, z s =z l =50 ohm, with application circuit1 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz, rf in to rf out1) -40 o c +25 o c +85 o c k factor frequency (ghz) 0 5 10 15 20 0.0 5.0 10 15 20 k factor vs. frequency (freq=50mhz~20ghz, rf in to rf out2) -40 o c +25 o c +85 o c k factor frequency (ghz)
NJG1151MD7 - 18 - electrical characteristics (through mode, 50 ohm) conditions: v dd =0v, ta=25c, z s =z l =50 ohm, with application circuit1 01 2 3 4 5 0 500 1000 1500 insertion loss vs. frequency (freq=20~1500mhz,rf in to rf out2) loss (db) frequency (mhz) (exclude pcb, connector losses) -30 -20 -10 0 10 20 -30 -20 -10 0 10 20 pout (dbm) pin (dbm) p-1db(in)=+10.0dbm pout pout vs. pin (freq=620mhz, rf in to rf out2) 02 4 6 8 10 -30 -20 -10 0 10 20 loss (db) pin (dbm) loss loss vs. pin (freq=620mhz, rf in to rf out2) p-1db(in)=+10.0dbm 0 5 10 15 20 0 200 400 600 800 1000 p-1db(in) vs. frequency (freq=40~1000mhz, rf in to rf out2) p-1db(in) (dbm) frequency (mhz) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf in return loss vs. frequency (freq=20~1500mhz) rli (db) frequency (mhz) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf out2 return loss vs. frequency (freq=20~1500mhz) rlo (db) frequency (mhz)
NJG1151MD7 - 19 - electrical characteristics (through mode, 50 ohm) conditions: v dd =0v, ta=25c, z s =z l =50 ohm, with application circuit1 s11, s22 s21, s12 zin, zout vswri, vswro s11, s22 (50mhz~20ghz) s21, s21 (50mhz~20ghz)
NJG1151MD7 - 20 - electrical characteristics (through mode, 50 ohm) conditions: v dd =0v, z s =z l =50 ohm, with application circuit1 01 2 3 4 5 -40 -20 0 20 40 60 80 100 insertion loss vs. temperature (freq=620mhz) loss (db) temperature ( o c) 0 5 10 15 20 -40 -20 0 20 40 60 80 100 p-1db(in) vs. temperature (freq=620mhz) p-1db(in) (dbm) temperature ( o c) 40 45 50 55 60 65 70 75 80 -40 -20 0 20 40 60 80 100 im2 vs. temperature (f1=90mhz, f2=100mhz, fmeas=190mhz, pin=-5dbm) im2 (db) temperature ( o c) 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100 im3 vs. temperature (f1=200mhz, f2=210mhz, fmeas=220mhz, pin=-5dbm) im3 (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf in return loss vs. temperature (freq=620mhz) rli (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf out return loss vs. temperature (freq=620mhz) rlo (db) temperature ( o c)
NJG1151MD7 - 21 - electrical characteristics (active mode, 75 ohm) conditions: v dd =5.0v, ta=25c, z s =z l =75 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 0 500 1000 1500 gain vs. frequency (freq=20~1500mhz, rf in to rf out1, zs=zl=75ohm) gain (db) frequency (mhz) (exclude pcb, connector losses) -4 -2 0 2 4 6 8 10 0 500 1000 1500 gain vs. frequency (freq=20~1500mhz, rf in to rf out2, zs=zl=75ohm) gain (db) frequency (mhz) (exclude pcb, connector losses) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf in return loss vs. frequency (freq=20~1500mhz, zs=zl=75ohm) rli (db) frequency (mhz) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf out return loss vs. frequency (freq=20~1500mhz, zs=zl=75ohm) rlo (db) frequency (mhz) rf out2 rf out1 05 10 15 20 25 30 35 40 0 500 1000 1500 reverse isolation vs. frequency (freq=20~1500mhz, zs=zl=75ohm) isl (db) frequency (mhz) rf out2 to rf in rf out1 to rf in 05 10 15 20 25 30 35 40 0 500 1000 1500 output to output isolation vs. frequency (freq=20~1500mhz, zs=zl=75ohm) oisl (db) frequency (mhz) rf out1 to rf out2 rf out2 to rf out1
NJG1151MD7 - 22 - electrical characteristics (active mode, 75 ohm) conditions: ta=25c, z s =z l =75 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gain vs. v dd (freq=620mhz, zs=zl=75ohm) gain (db) v dd (v) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 rf in return loss vs. v dd (freq=620mhz, zs=zl=75ohm) rli (db) v dd (v) 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 rf out return loss vs. v dd (freq=620mhz, zs=zl=75ohm) rlo (db) v dd (v) rf out1 rf out2 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 reverse isolation vs. v dd (freq=620mhz, zs=zl=75ohm) isl (db) v dd (v) rf out1 to rf in rf out2 to rf in 0 10 20 30 40 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 output to output isolation vs. v dd (freq=620mhz, zs=zl=75ohm) oisl (db) v dd (v) rf out1 to rf out2 rf out2 to rf out1
NJG1151MD7 - 23 - electrical characteristics (active mode, 75 ohm) conditions: v dd =5.0v, z s =z l =75 ohm, with application circuit1 -4 -2 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 gain vs. temperature (freq=620mhz, zs=zl=75ohm) gain (db) temperature ( o c) (exclude pcb, connector losses) rf in to rf out1 rf in to rf out2 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf in return loss vs. temperature (freq=620mhz, zs=zl=75ohm) rli (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf out return loss vs. temperature (freq=620mhz, zs=zl=75ohm) rlo (db) temperature ( o c) rf out1 rf out2 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 reverse isolation vs. temperature (freq=620mhz, zs=zl=75ohm) isl (db) temperature ( o c) rf out1 to rf in rf out2 to rf in 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 output to output isolation vs. temperature (freq=620mhz, zs=zl=75ohm) oisl (db) temperature ( o c) rf out1 to rf out2 rf out2 to rf out1
NJG1151MD7 - 24 - electrical characteristics (through mode, 75 ohm) conditions: v dd =0v, ta=25c, z s =z l =75 ohm, with application circuit1 01 2 3 4 5 0 500 1000 1500 insertion loss vs. frequency (freq=20~1500mhz,rf in to rf out2, zs=zl=75ohm) loss (db) frequency (mhz) (exclude pcb, connector losses) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf in return loss vs. frequency (freq=20~1500mhz, zs=zl=75ohm) rli (db) frequency (mhz) 05 10 15 20 25 30 35 40 0 500 1000 1500 rf out2 return loss vs. frequency (freq=20~1500mhz, zs=zl=75ohm) rlo (db) frequency (mhz) 01 2 3 4 5 -40 -20 0 20 40 60 80 100 insertion loss vs. temperature (freq=620mhz, zs=zl=75ohm) loss (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf in return loss vs. temperature (freq=620mhz, zs=zl=75ohm) rli (db) temperature ( o c) 0 10 20 30 40 50 -40 -20 0 20 40 60 80 100 rf out return loss vs. temperature (freq=620mhz, zs=zl=75ohm) rlo (db) temperature ( o c)
NJG1151MD7 - 25 - parts list parts id manufacture l1 taiyo-yuden hk1608 series l2~l4 taiyo-yuden hk1005 series c1~c8 murata grm15 series r1, r3, r4 koa rk73 series application circuit1: with through sw function state table1 application circuit1: with through sw v dd lna loop through sw rf in to rf out1 rf in to rf out2 0v off on isolate mode (-28db) through mode (-0.4db) 5.0v on off active mode (6db) active mode (5.6db) l2 10n l1 470n rf in rf out1 rf out2 c1 0.01u r1 470 5 6 7 9 10 11 12 13 14 2 13 4 8 lnain lnaout splin splout1 sw out2 sw out1 sw in1 splout2 sw in2 gnd gnd gnd gnd gnd splitter splitter splitter c2 0.01u c4 0.01u c5 0.01u c6 0.01u c7 0.01u c3 0.01u l4 27n r4 56k c8 1.5p v dd r3 1k l3 2.2n (top view) 1pin index
NJG1151MD7 - 26 - test pcb layout precautions - c1~c4, c6 and c7 are dc-blocking capacitors, and c5 is a bypass capacitor. - l1 is rf choke inductor. (dc feed inductor) - r4 is the resistance to adjust the operating curr ent. - l2~l4, r1, r3 and c8 are negative feedback circui t and impedance matching. - all external parts, please be placed as close to the ic. - the backside exposed pad, because it is used to h eat dissipation, please grounded via a through-hole near the ic. rf in rf out2 rf out1 c1 c2 l2 1pin ind ex l1 r4 c8 r1 c3 l4 r3 l3 c5 c4 c6 c7 v dd (top view) pcb: fr-4, t=0.2mm microstrip line width: 0.4mm pcb size: 16.7mm x 19.1mm
NJG1151MD7 - 27 - recommended footprint pattern (eqfn14-d7 package reference) detail a : mask (open area) *metal mask thickness: 100um : resist (open area) pkg: 1.6mm x 1.6mm pin pitch: 0.4mm : land
NJG1151MD7 - 28 - l2 10n l1 470n rf in rf out1 rf out2 c1 0.01u r1 470 5 6 7 9 10 11 12 13 14 2 13 4 8 lnain lnaout splin splout1 sw out2 sw out1 sw in1 splout2 sw in2 gnd gnd gnd gnd gnd splitter splitter splitter c2 0.01u c4 0.01u c5 0.01u c3 0.01u l4 27n r4 56k c8 1.5p v dd r3 1k l3 2.2n (top view) 1pin index dont connect (open) parts list parts id manufacture l1 taiyo-yuden hk1608 series l2~l4 taiyo-yuden hk1005 series c1~c5, c8 murata grm15 series r1, r3, r4 koa rk73 series application circuit2: without through sw function state table2 application circuit2: without through sw v dd lna rf in to rf out1 rf in to rf out2 0v off isolate mode (-28db) isolate mode (-28db) 5.0v on active mode (6db) active mode (6db)
NJG1151MD7 - 29 - measurement block diagram measuring instruments nf analyzer : agilent 8973a noise source : agilent 346a setting the nf analyzer measurement mode form device under test : amplifier system downconverter : off mode setup form sideband : lsb averages : 4 average mode : point bandwidth : 4mhz loss comp : off tcold : setting the temperature of noise source (30 3k) calibration setup noise source (agilent 346a) nf analyzer (agilent 8973a) * noise sauce, the preamplifier, and nf analyzer are connected directly. input (50 ohm) noise source drive output preamplifier njg1145ua2 gain=15db, nf=1.5db * noise sauce, dut, the preamplifier, and nf analyzer are connected directly. measurement setup noise source (agilent 346a) dut nf analyzer (agilent 8973a) input (50 ohm) noise source drive output in out preamplifier njg1145ua2 gain=15db, nf=1.5db
NJG1151MD7 - 30 - package outline (eqfn14-d7) caution s on using this product this product contains gallium-arsenide (gaas) wh ich is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this pro duct. ? to wast e th is product, please obey the relati ng law of your country. this product may be damaged with electric static di scharge (esd) or spike voltage. please hand le with care to avoid these damages . [caution] the specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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